Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO
x
based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10
³
@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10
⁶
for worst case condition).