Quantum transport in deterministically implanted single-donors in Si FETs

Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D
⁰
and D
^-
states; Hubbard band formation due to the inter-donor coupling.