High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching

In this paper, we report InGaAs channel MOSFETs with an InP source contact. InP source contact enables the suppression of carrier starvation and the easy shrinkage of the channel length by anisotropic etching. In fabricated 50-nm InGaAs channel MOSFETs, I
_D
= 2.4A/mm at V
_D
=0.5V were observed. On the other hand, degradations of V
_th
and SS by the short channel effect were also observed. Thinner channels will be required in order to suppress this effect.