Optical Channel Waveguide in KTiOAsO $_{4}$ Crystals Produced by O$^{+}$ion Implantation

We report on the fabrication and characterization of optical channel waveguide in x-cut KTiOAsO
₄
crystal produced by photographic masking and following direct O ion implantation at energy of 3.0 MeV and fluence of 5 × 10
¹³
ions/cm
²
. Positive changes of both and refractive indices (corresponding TM and TE polarized light respectively) in the waveguide region are responsible for light waveguiding. After annealing treatment, the propagation losses of the waveguide could be reduced to 1.2 dB/cm, exhibiting acceptable guiding properties.