A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity

We present a portfolio of manufacturable, high power Gallium Nitride (GaN) RF power technologies, demonstrating both an improved 2nd generation linear variant and qualified operation at 65V. To the best of our knowledge, this is the first solid state RF technology qualified for reliable operation at 65V. Furthermore, the 2nd generation linear technology offers 22dB improvement in uncorrected intermodulation distortion at 48V operation and 55W of equivalent output power.