Planar antennas for detection of 340 GHz band with single Si metal-oxide-semiconductor field-effect transistors

A set of planar antennas was numerically designed to optimize detection of 340 GHz with Si MOSFETs. A series of MOSFETs monolithically coupled with different types of slot antennas was fabricated and tested as room temperature detectors. The MOSFETs of different sizes were fabricated on a SOI substrate thinned down to 40 μm. We observed a photovoltaic non-resonant detection signal and its strong dependence on the modulation frequency of the incident beam. We found that the signal does not strongly depend on geometrical parameters of MOSFETs.