A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.