DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects

A test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set-up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS. The measurement performed have demonstrated the dispersion effects observed on GaN HEMTS due to trapping effects and proved very useful for in-depth characterization of RF devices.