Broadband 31–65 GHz inductorless active balun with 12.4 dB gain in 0.13μm SiGe:C BiCMOS technology

An inductorless single-ended input to differential output active balun is presented. The balun has a 12.4dB gain at 50GHz and a 3-dB bandwidth from 31 to 65GHz. Measured maximum amplitude and phase errors between the two outputs are 0.5 dB and 2.5°, respectively. Measured input and output reflection are below -15dB and -10dB respectively and the reverse isolation is better than 38 dB. Time domain measurements indicate 1.4 ps and 187 fs peak-to-peak and rms jitter, respectively. The balun is designed in a 0.13 μm SiGe:C BiCMOS technology, dissipates 278mW and occupies 0.47 mm
²
.