Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al/sub x/Ga/sub 1-x/As molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al/sub x/Ga/sub 1-x/As so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.