Monolithically integrated MSM-PD/HEMT photoreceiver prepared on identical InP/InGaAs 2DEG heterostructure

A new approach of the preparation of monolithically integrated photoreceiver is described. The photodetector and the amplifier consist of an identical InP/InGaAs heterostructure. An optimal layer structure with 150 nm thick InGaAs absorption region above the 2DEG is found. The MSM-PD exhibit 0.26 A/W responsivity and 16 GHz bandwidth. The pHEMT shows f/sub T//f/sub max/ of 45/85 GHz. The measured bandwidth of the photoreceiver is 7 GHz and a bandwidth of 15 GHz follows from the simulation on optimized circuit.