Novel analysis of impact of single dopants on sub-15nm channel length FDSOI NMOSFETs utilizing cryogenic measurements

In FDSOI NMOSFETs with sub-15 nm channel lengths, the presence of single diffused dopants is evidenced by cryogenic conductance measurements (down to 4 K). Based on the magnitude of conductance through these single dopants at 4 K, their lateral position in the channel is estimated. This cryogenic spatial analysis relates to room temperature characteristics and allows explaining the dispersion observed in the device characteristics.