Engineering of low-frequency and low-noise MEFSET average-capacity with regard for fractal properties of gallium arsenide epitaxial layers

The result showed that consideration of n-GaAs epitaxial layer fractal properties allows one to obtain better instrument characteristics in the process of engineering and manufacturing of 0.01–1 GHz low-noise MOFSET of average power 100–500 mW: smaller noise coefficient and higher gain coefficient Cg>25 dB (transconductance of G
M
>180 mS/mm) at a longer gate L
g
=1 microns. The results thus indicated the effectiveness of the fractal approach in the process of engineering low-frequency average power MEFSET.