GaN-InN gann diodes characteristics in biharmonic mode

The results of researches of power characteristics for Gunn-diode on the base of the alloy variband semiconductor GaN-InN with different active lengths in the biharmonic mode are presented. The influence of the region between GaN and InN length, cathodes contact and frequency on the diodes efficiency is studied. The possibility of efficient operation for Gunn diodes on the second harmonic in terahertz's range is shown.