Device characterization in 90 nm CMOS up to 110 GHz

This paper presents the small signal characterization of nMOS transistors in 90 nm CMOS technology. Two different transistor widths are characterized based on the measurement results up to 110 GHz. The widths of the transistors are optimized for low noise and power amplifier applications at 60 GHz. For the characterization purpose, the on-chip feeding structures (pads, transmission lines and vias) are extracted from the measurement results with the help of Electro Magnetic simulations.