The design of high-precision BiCOMS bandgap voltage reference

The bandgap reference circuit is suited for on-chip voltage down converters. The proposed BGR is designed and fabricated by 0.8 µ m BiCMOS technology. The occupied silicon area is only 400µm × 220 µm. The little temperature coefficient is generated by adjusting the proportion of the resistance network, the output voltage changes only 2mV when the temperature sweeps from — 30 to 150°C. The output voltage is independent of the source voltage and will be stable when the supply voltage is higher than 2.7V. The output is flat over a wide range of the supply voltage from 2.7 to 6V with a drift of only 4mV.