A wide-band small-signal model from 2 to 85 GHz

In this paper, a new extraction method is developed for creating a very wide band, from 2 to 85 GHZ, small-signal model for interdigitated, low noise, pseudomorphic high electron mobility transistor (pHEMT). By applying the scalability nature of transistor, a physically related small-signal model is obtained through curve-fitting optimization. This new extraction method also eliminates the need of a de-embedding procedure.