The model of IGBT as a power switch

Generally there are two kinds of IGBT model. They are Hefner and model macro model. The Hefner model is made up of a mosfet and a pnp. It is difficult for parameter extraction. The macro model is made up of some capacitors and a current source. However when the IGBT work as a power switch, the IGBT switches between cut-off area and saturated area. Its behavior is not the same as a current source. In fact the IGBT is anti-parallel with a diode. Its measure data such as input capacitance Ciss includes equivalent capacitor of diode. It is a problem to build the IGBT model without the consideration of the anti-parallel diode. So in the paper there is a new macro IGBT model for an IGBT as a power switch. The model is made up of two capacitors, a voltage-controlled switch and a diode. In the paper there is an example for building the model. It is simulated. The results prove that the model electrical data simulated equals basically its component actual data. The parameter extraction of model only need the data of its component manual. It is very suitable for electrical engineers to design power circuit using an IGBT as a power switch.