Light Emission Enhancement From Er-Doped Silicon Photonic Crystal Double-Heterostructure Microcavity

We experimentally demonstrate efficient light emission enhancement from Si with Er/O co-implanting coupled to 2-D hexagonal photonic crystal (PC) double-heterostructure microcavity fabricated on silicon-on-insulator. A single sharp resonant peak with 1552.2 nm communication wavelength dominates the photoluminescence (PL) spectrum and 35-fold PL intensity enhancement is obtained compared to the case of identically implanted silicon-on-insulator wafer at room temperature. The obvious red-shift and degraded
Q
-factor of resonant peak are present with the excitation power increasing, and the maximum measured
Q
-factor of 3829 is found at 1.5 mW power. The resonant peak is observed to shift depending on the structural parameters of PC.