Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers

We investigated the effect of recombination in separate-confinement heterostructure (SCH) layers on the temperature characteristics of lasers. It was found that the large dependence of recombination on the threshold carrier density can be used to greatly reduce the characteristic temperature T/sub 0/. A reduction of recombination in the SCH layer is essential for a high-optical confinement factor in each well. To obtain a high-optical confinement factor in wells at a 1.3-/spl mu/m emission, we fabricated a laser having a wide bandgap cladding layer by introducing a hetero-epitaxial buffer layer. This laser exhibited a temperature characteristic between that of short and long-wavelength lasers, as was expected from the optical confinement factor per well.