Characteristics of novel titanium oxide thin film used for nonvolatile memories

With the physical method of depositing TiO
₂
thin films, the bipolar resistive switching phenomenon is observed. We find that I-V curve in oxygen-filled sample is less symmetric than in the oxygen-unfilled. The conduction behavior is dominated by Ohmic behavior in the LRS and SCLC in the HRS, which proves that there is a negative resistive in the transition from LRS to HRS. The Pt/titania/Pt cell can find its application to the NVMS.