Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si
_0.5
Ge
_0.5
source. The device shows good performance with an average subthreshold swing S of 80mV/dec over a drain current range of more than 3 orders of magnitude. We observed that an applied back-gate bias increases the on-current by a factor of 1.6, and improves the off-current and the subthreshold swing (S). Low temperature measurements show a slightly temperature dependent S, characteristic for a tunneling dominated device.