Parameter determination of Schottky -barrier diode model using genetic algorithm

In this paper, genetic algorithm (GA) has been applied to extract the Schottky-barrier height, ideality factor and series resistance, this new method presents the effect of wide range temperature of Schottky-barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is discussed. The results found was compared with experimental current-voltage data, it has been confirmed that the proposed method can obtain higher parameter precision with better computational efficiency more easily than other methods.