Enhanced TFTs model using novel nano-composite high-k gate dielectric

This paper demonstrates an analytical suggested model for enhancing the performance of Thin-Film Transistors (TFTs) by replacing the conventional silicon dioxide gate dielectric with high-k gate dielectric novel nano-composite PVP/La
₂
O
₃
(k
_ox
=25). Our suggested model has a Single nano-composite Material Gate SMG MOSFETs. Also, it has been studied the effects of the gate-dielectric permittivity, spacer oxide permittivity, gate length, and the width of TFTs structure.