Fabricating zinc oxide semiconductor device of flexible substrate by using the spin-coating method

In recent years, zinc oxide (ZnO) semiconductor have attracted much attention. Amorphous silicon thin film transistors are currently processed at a high temperature (>;600 °C), with low mobility, but cannot be used in flexible electronics. Other organic thin film transistors were fabricated at a low temperature with middle mobility, but had a short life. This study used a bottom gate structure, low temperature (<;400 °C) and spin-coating method to achieve the ZnO device with the on-off ratio = 10
⁷
. The future study will focus on reducing channel width and length of devices, and the flexible substrate to make better flexible devices.