2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs

A framework for the 2D analytical closed-form calculation of the electrostatic potential and electric field in undoped or lightly doped Double-Gate MOSFETs (DG-MOSFETs) and Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs) in subthreshold region is presented. Solutions for constant and linear boundary conditions are used to model step by step the potential and the electric field for these structures of Double-Gate MOSFETs.