An improvement on p-channel SOI LIGBT by adopting slit type p-drift structure

A new p-channel slit type p-drift lateral IGBT (p-ch SD-LIGBT) is described. This device is fabricated with thick buried-oxide SOI, using 0.8 /spl mu/m CMOS process. The improvement of slit type p-drift structure makes it possible to realize excellent characteristics in the trade-off between breakdown voltage and on-state current relationship compared with p-ch conventional SOI-LIGBT. Furthermore, measured characteristics are reported for p-ch SOI-LIGBT with a breakdown voltage of more than 500 V for the first time.