EuMnO3 effects on structure and electrical properties of chemical solution deposited BiFeO3 thin films

Multiferroic (Bi
_1-x
Eu
_x
)(Fe
_1-x
Mn
_x
)O
₃
(BEFM-x, x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) thin films were prepared on Pt(111)/Ti/SiO
₂
/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BiFeO
₃
thin film, improved ferroelectric property and reduced leakage current density were observed in the co-doped BEFM-x thin films. Among them, the BEFM-0.08 thin film capacitor showed the best properties. The values of remnant polarization (2P
_r
) and coercive electric field (2E
_c
) were 93 μC/cm
²
and 531 kV/cm at an applied electric field of 932 kV/cm, respectively. The leakage current density of the BEFM-0.08 thin film capacitor was 2.5×10
^-5
A/cm
²
at 100 kV/cm.