A New SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability

SrBi
₄
Ti
₄
O
₁₅
(SBTi) and CaBi
₄
Ti
₄
O
₁₅
(CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO
₃
(BST) case, it is observed that the SBTi film keeps a low leakage of 10
^-7
A/cm
²
at 250 kV/cm, which is smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.