Device scaling technologies for ultra-high-speed GaN-HEMTs

The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN or InGaN back barriers, thin AlN top barriers, lattice-matched InAlN barriers, ultra-short gates, and self-aligned gates. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs, which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.