Interface states at high- к /InGaAs interface: H2O vs. O3 based ALD dielectric

By combining the capacitance and conductance analysis techniques, we obtained the D
it
distribution throughout the band gap of In
0.53
Ga
0.47
As capacitors with H
2
O-based and O
3
-based ALD oxides. The choice of appropriate temperature to obtain the quasi-static C-V and the DC voltage sweep rate is an essential for the correct extraction of D
it
. Simultaneously we obtained the trap kinetics characteristics. We claim that: (i) the H
2
O-based ALD deposition results in a fewer traps in the lower portion of In
0.53
Ga
0.47
As band gap, (ii) is related to the formation of the thicker native oxide in the O
3
-based samples; (iii) the mid gap traps in the H
2
O-based samples are significantly slower than those in the O
3
-based samples, which indicate their different nature.