670 GHz power amplifier development at Northrop Grumman

Summary form only given. Northrop Grumman Electronic Systems (NGES) is developing compact, efficient sources above 100 GHz as part of the DARPA THz Electronics (THzE) program. The THzE Phase I goal is a high duty amplifier producing 100 mW of RF power at 670 GHz. These devices will use advanced, high current density cathodes, a folded waveguide as the slow-wave circuit, and a depressed collector for overall device efficiency. Operation at duty cycles of 50-100% is anticipated. Realization of fully-integrated high power amplifiers at these frequencies will have a significant impact on a variety of defense applications including covert, high data-rate communication, airborne collision avoidance systems, and high resolution radar imaging.