A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors

In this study, we extract the off-state current component from the asymmetric transistors in short channel 40 nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ = 0.0168) of off-stat current.