Impact of SEU configurations on a SRAM cell response at circuit level

This work focuses on the SEU simulation in a 90nm SRAM cell, in order to provide basic metrics for reliability studies. To do that, a charge generation model is used to simulate the impact of an ionizing particle striking a sensitive node. The current collected at this particular node is extracted and injected at a circuit level. Thus, a correlation between the circuit electrical behavior and the critical charge is presented.