Strain-engineering for high-performance STT-MRAM

Strain-engineering using the inverse magnetostrictive effect has been performed to improve the performance of spin transfer torque magnetoresistance random access memory (STT-MRAM). The thermal stability factor E/k
_B
T has been enhanced by 40% without increasing a switching current by controlling the process-induced stress in a free layer in MTJ (magnetic tunnel junctions) with mechanically engineered manufacturing steps.