Deterministic and stochastic component in RESET transient of HfSiO/FUSI gate RRAM stack

Resistive RAM (RRAM) is proposed as an alternative concept for future memory technologies. Its operation relies on the voltage-controlled resistance change of a MIM capacitor through a conductive filament. Fundamental understanding of the filament properties is mandatory for further RRAM development. In previous work, we focused on filaments formed in a transistor with SiO
₂
/HfSiO/FUSI stack. In this stack ,a filament in the gate dielectric due to Ni penetration from the NiSi gate is formed, and unipolar RRAM operation with positive gate voltage occurs. The separation of the gate current over source and drain in a transistor can be used to determine the filament location, and reliably allows accurate modeling of current changes during set/reset in an isolated filament. A quantum mechanical (QM) conduction model (details in) allows to extract the main filament properties and track their changes during cycling.