Reflection-type phase shifter integrated on advanced BiCMOS technology in the 60 GHz band

In this paper, we present the design, the realization and the measurement of a Reflection-Type Phase Shifter (RTPS) realized in the BiCMOS9MW 130nm process from ST Microelectronics dedicated to millimeter wave applications. The aim of this work is to miniaturize the circuit, while maintaining good performances in the whole 57-66 GHz-band. The insertion loss is lower than 7 dB across the entire band with only 3.5 dB variation. It achieves a continuous phase shift of 60° with only 24° variation on this same bandwidth thanks to BiCMOS varactors. All the circuits are compared with recent achievements presented in published papers.