Preparation and characterization of sol-gel derived Bi/sub 4/Ti/sub 3/O/sub 12/ thin films

Sol-gel derived Bi/sub 4/Ti/sub 3/O/sub 12/ thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550/spl deg/C to 700/spl deg/C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400/spl deg/C between coatings was performed to obtain films up to 0.5 /spl mu/m thick. Single phase Bi/sub 4/Ti/sub 3/O/sub 12/ films were obtained when fired at 600/spl deg/C which exhibited a dielectric constant of 225.