Structural evaluation of GaAs1−xBix mixed crystals by TEM

GaAs
_1-x
Bi
_x
/GaAs multiple quantum well (MQW) structures and GaAs
_1-x
Bi
_x
thin films (x <; 0.109) grown on (001) GaAs substrates by molecular beam epitaxy have been structurally evaluated by transmission electron microscopy. In both cases, grown-in defects such as dislocations, dislocation loops, and precipitates, composition modulated structure, and ordered structure were not observed all. From these results, it is expected that these materials are very promising for achieving high performance of MQW lasers emitting in the long wavelength range.