Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffraction

We have developed the calculation technique using wafer's curvature and X-ray diffraction (XRD) pattern to analyze the structure of InGaAs/GaAsP multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE). Instead of using difficult and time consuming XRD reciprocal space mapping (RSM), the curvature can effectively supplement the uncertain information of MQWs obtained from XRD 2θ-ω scan. We have proposed an alternative method to determine the physical parameters of MQWs structure.