Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth

In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In
_0.53
Ga
_0.47
As by means of selective growth of epitaxial Ge followed by selective Ni germanidation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity ρ
_C
of the contacts. Values of ρ
_C
in the order of 4×10
^-5
Ω-cm
²
have been measure This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.