Lateral Field Excitation of membrane-based Aluminum Nitride resonators

This paper reports the fabrication of Lateral Field Excitation resonators on a free-standing Aluminum Nitride membrane. We present a very simple fabrication process, and discuss the electrical measurements. In particular, the influence of the electrode width on the generation of parasitic longitudinal waves is demonstrated. We also provide measurements of the temperature dependence of the resonance frequency of the thickness-shear mode, which is of −14 ppm/°C, being much lower than the temperature dependence of the thickness-extensional mode in the same material stack.