Comparative study of HEMTs for LNAs in Square Kilometre Array telescope

The paper focuses on a comparative study of transistors of different dimensions from nine prominent low noise HEMT processes around the world. The transistors include a combination of pHEMTs and mHEMTs based on GaAs and InP substrates with gate lengths ranging from 150nm to 70nm. The Square Kilometre Array telescope will require more than 30 million low noise amplifiers (LNA). Importance of power consumption and variation of ambient temperature of the amplifiers over time and also location are being recognised as two of the primary issues. Here a detailed comparative study of noise and gain indices of HEMTs of nine processes is presented with respect to power consumption. The variation of gain and minimum noise figure with respect to temperature from -50°C to 60°C is also analysed.