A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications

Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (f
_T
, f
_max
) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.