RF characterization of epitaxial graphene nano ribbon field effect transistor

RF characterization of epitaxial graphene nano ribbon field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of {0001} silicon carbide under UHV environment. Raman spectroscopy, AFM and Hall measurement were used to investigate the properties of graphene synthesized. Despite the Hall mobility was lower than 500 cm
²
/Vs, the intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 30 GHz were obtained. This work shows the strong potentiality of GNRFET in future high speed electronics.