Semiconductor opening switch research at IEP

This paper describes the physical principles of operation of semiconductor opening switches (SOS). The SOS effect occurs at a current density of up to 60 kA/cm/sup 2/ in silicon p/sup +/-p-n-n/sup +/ structures filled with residual electron-hole plasma with the concentration between 10/sup 16/ and 10/sup 17/ cm/sup -3/. On the basis of a theoretical model developed for plasma dynamic calculation the mechanism by which the current passes through the structure at the stage of high conduction and the processes that occur at the stage of current interruption have been investigated. Dynamics of the electron-hole plasma were calculated with allowance for real distribution of impurity doping in the structures. Experimentally obtained current density-time, and current density-interruption time dependencies of semiconductor opening switches are discussed. Applications of the SOS effect in pulsed power is also be demonstrated.