Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

An ultrathin ~1 nm TaO
_x
layer was inserted at the interface between a top Pt electrode and TiO
₂
as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can be interpreted as due to the TaO
_x
layer working as an oxygen reservoir.