Dynamic characterization of 63 mQ, 1.2 kV, normally-off SiC VJFET

Enhancement-mode high voltage SiC VJFETs are available on market today. In this paper we present results of dynamic characterization of these devices. A standard double pulse test with clamped inductive load was used during this characterization. Switching times are registered and energy losses are calculated. The impact of driver circuitry on device performance is highlighted. A comparison between commercially available driver and an optimized driver is established here showing the dependency of switching losses of this device on driver circuit. When an optimized driver is used, a reduction of 80% and 70% in turn-off time and switching loss is observed, respectively.