3D-TCAD simulation study of an electrically induced Source/drain cylindrically surrounding gate MOSFETs for reduced SCEs and HCEs

In this paper a three dimensional simulation study of a cylindrically surrounding gate with electrically induced source/drain shallow junction has been carried out to demonstrate the ability of this device to overcome the short channel and hot carrier effects. The surface potential, electric field and the electron temperatures in the channel region has been taken to assess the device performance. It has been found that this device is capable of overcoming effectively the short channel and hot carrier effects.