Carbon nanotube interconnects: Electrical characterization of 150 nm CNT contacts with Cu damascene top contact

The integration of Carbon Nanotubes (CNT) in contact holes with TiN underlayer using CMOS compatible processes is discussed. Each process step was optimized by evaluating the electrical results obtained with contact test structures. Subsequently, this process was transferred to 150 nm diameter contact holes. We present the first electrical data obtained from automated probing of 150 nm diameter contacts filled with CNT connected by a Cu damascene top contact module. This constitutes a significant step forward towards the realization of CMOS contact modules with CNT interconnects.